Planarised selective regrowth of semi-insulating InP by LP-MOVPE using tertiarybutylchloride
Abstract
En
Selective regrowth of Fe−doped InP by tertiarybutylchloride (TBCl) assisted low pressure MOVPE on tall and narrow ridges has been investigated regarding the chloride addition, the surface morphology, and the mesa shape. Planarisation experiments have been carried out on ridges orientated in the [110] direction on (100) InP:Sn substrate. An excess growth ratio as low as 6% was achieved on 1.5 µm wide –3 µm high mesas. The planarisation effect was found to depend mainly on the chloride concentration during the selective growth. Thus, we were able to demonstrate the establishment of a successful planarisation process by means of TBCl addition, essential to the fabrication of high speed optoelectronic devices.
Selective regrowth of Fe−doped InP by tertiarybutylchloride (TBCl) assisted low pressure MOVPE on tall and narrow ridges has been investigated regarding the chloride addition, the surface morphology, and the mesa shape. Planarisation experiments have been carried out on ridges orientated in the [110] direction on (100) InP:Sn substrate. An excess growth ratio as low as 6% was achieved on 1.5 µm wide –3 µm high mesas. The planarisation effect was found to depend mainly on the chloride concentration during the selective growth. Thus, we were able to demonstrate the establishment of a successful planarisation process by means of TBCl addition, essential to the fabrication of high speed optoelectronic devices.
DOI Code:
10.1285/i9788883050088p187
Keywords:
Planarisation; InP; TBCl; MOVPE
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